2013. 7. 24 1/2 semiconductor technical data FM200CD1D5B revision no : 0 150v / 200a 2-pack mosfet module (common-drain) features h low r ds(on) h high frequency operation h dv/dt ruggedness h fast switching application h battery management system h electric vehicle internal circuit characteristic symbol rating unit drain-to-source breakdown voltage v dss 150 v gate to source voltage v gss ? 30 v continuous drain current @t c =25 ? i d 340 a @t c =100 ? 240 pulsed drain current @t c =25 ? , pulsed i dm 1300 a isolation voltage test ac@1minute v iso 2500 v junction temperature t j -40 q +150 ? storage temperature t stg -40 q +125 ? weight weight 365 ? 5 g mounting torque (m6) m 5 n m terminal connection torque (m5) m 4 n m 12 67 3 5 4 1. d1d22. s2 3. s1 4. g15. s1 6. g2 7. s2 maximum rating (@tc=25 ? per leg, unless otherwise noted) outline drawing unit : mm + _ 13 0.3 + _ 14 0.3 + _ 13 0.3 + _ 13 0.3 + _ 17 0.3 + _ 6 0.5 35 0.5 + _ 28 0.5 + _ 25 0.3 + _ 17 0.3 + _ 93 0.5 + _ 80 0.5 + _ 23 0.3 + _ + _ 23 0.3 30 0.5 + _ 22 0.5 + _ + _ 30 0.5 + _ 31 0.5 1 67 5 4 23 downloaded from: http:///
2013. 7. 24 2/2 FM200CD1D5B revision no : 0 electrical characteristics (@tc=25 ? per leg, unless otherwise noted) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 150 - - v gate threshold voltage v th v ds =v gs , i d =250 u 3.0 - 5.0 v drain to source leakage current i dss v ds =150v, v gs =0v - - 40 a gate to source leakage current i gss v gs =20v - - 200 na v gs =-20v - -200 na drain to source on resistance r ds(on) v gs =10v, i d =200a - 3.3 4.0 m ? dynamic total gate charge q g i d =200a, v ds =75v, v gs =10v - 300 - nc gate to source charge q gs - 100 - gate to source charge q gd - 110 - turn on delay time t d(on) v ds =75v, i d =200a, r g =3.3 ? - - tbd - ns rise time t r - tbd - turn off delay tine t d(off) - tbd - fall time t r - tbd - input capacitance c iss v ds =50v, v gs =0v, f=1 ? - 20 - nf output capacitance c oss - 2 - reverse transfer capacitance c rss - 0.4 - source-drain diode ratings continuous source current i s - - 340 a pulsed source current i sp - - 1300 a diode forward voltage v sd i d =200a, v gs =0v - 1.0 1.4 v reverse recovery time t rr v r =75v, i d =200a, di/dt = -100a/us - tbd - ns reverse recovery charge q rr - tbd - nc downloaded from: http:///
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